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G8370-81 InGaAs PIN Photodiode Low PDL Polarization Dependence Loss

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G8370-81 InGaAs PIN Photodiode Low PDL Polarization Dependence Loss

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Brand Name : Hamamatsu

Model Number : G8370-81

Place of Origin : Japan

MOQ : 1

Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram

Supply Ability : 2000pcs/Month

Delivery Time : 3-5work days

Packaging Details : In a box

Price : Negotiable

photosensitive area is : φ1.0mm

Number of pixels : 1

Encapsulated : Metal

encapsulation type is : TO-18

Cooling mode : Non - cooled

spectral response range is : 0.9 to 1.7 μm

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Product Description:

G8370-81 InGaAs PIN Photodiode Low PDL Polarization Dependence Loss

Features:

Low PDL(polarization dependent loss)

InGaAs PIN photodiode G8370-81 has low PDL (polarization dependent loss), large shitter resistance and very low noise at 1.55μm.

Product features

Low PDL(polarization dependent loss)

● Low noise, low dark current

● Large photographic area

● Photosensitive area: φ1 mm

Noise equivalent power (typical value) 2×10-14 W/ hz1/2

Measurement conditions TYP.TA =25 ℃, Photosensitivity: λ=λp, Dark Current: VR=1 V, Cutoff frequency: VR=1 V, RL=50 ω, -3 dB, Terminal capacitance: VR=1 V, F =1 MHz, unless otherwise noted

Specifications:

peak sensitivity wavelength (typical value) was 1.55 μm
Sensitivity (typical value) 1.1 A/W
Dark current (maximum) 5 nA
Cutoff frequency (typical value) 35 MHz
Junction capacitance (typical value) 90 pF
Noise equivalent power (typical value) 2×10-14 W/ hz1/2

G8370-81 InGaAs PIN Photodiode Low PDL Polarization Dependence Loss


Product Tags:

G8370-81 Infrared Photoelectric Sensor

      

Infrared Photoelectric Sensor Low PDL

      

InGaAs PIN Photodiode

      
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